Cu2ZnSn(S,Se)4 thin film solar cells using printing and high-pressure sintering process

被引:7
作者
Gao, Feng [1 ]
Maeda, Tsuyoshi [1 ]
Wada, Takahiro [1 ]
机构
[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan
基金
日本科学技术振兴机构;
关键词
FABRICATION;
D O I
10.7567/JJAP.53.04ER11
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells by a screen printing and high-pressure sintering (PHS) process. CZTSSe powders with a Cu-poor and Zn-rich composition of Cu1.9Zn1.25Sn(S0.4Se0.6)(4.5) were synthesized by mixing the elemental powders and post-heating at 200-600 degrees C. Then, we fabricated CZTSSe films by PHS. The obtained CZTSSe films were post-annealed at 550-600 degrees C for 10 min under various atmospheres. The CZTSSe solar cell with a device structure of Ag/indium tin oxide (ITO)/i-ZnO/CdS/CZTSSe/Mo/soda-lime glass showed an efficiency of 2.63%, with an open circuit voltage (V-oc) of 372 mV, a short circuit current density (J(sc)) of 18.7 mA/cm(2), and a fill factor (FF) of 37.8%. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数:5
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