Atomic layer deposition of GdHfOx thin films

被引：1

作者：

Adelmann, C. ^{[1
]}

Pierreux, D. ^{[2
]}

Swerts, J. ^{[1
]}

Rosseel, E. ^{[1
]}

Shi, X. ^{[1
]}

Tielens, H. ^{[1
]}

Kesters, J. ^{[1
,3
]}

Van Elshocht, S. ^{[1
]}

Kittl, J. A. ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Heverlee, Belgium

[2] ASM Belgium, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 5 | 2009年 / 25卷 / 04期

关键词：

HFO2; FILMS; OXIDE; TRANSFORMATION; DIELECTRICS; SILICON;

D O I：

10.1149/1.3205059

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GdHfOx thin films were deposited by atomic-layer deposition (ALD) using Tris(isopropyl-cyclopentadienyl) Gadolinium [Gd(i-PrCp)(3)] and HfCl4 in combination with H2O as oxidizer. Growth curves show nearly ideal ALD behavior. The growth per cycle is found to be 0.55 angstrom, independent of Gd/(Gd+Hf) composition in the studied range. This indicates that the amount of HfO2 deposited during an HfCl4/H2O cycle is identical to the amount of Gd2O3 deposited during a Gd(i-PrCp)(3)/H2O cycle. The film composition can therefore be deduced from the HfCl4/Gd(i-PrCp)(3) cycle ratio. The crystallization of GdHfOx with Gd/(Gd+Hf) contents between 9% and 30% was studied. All films crystallize into a cubic/tetragonal HfO2-like phase during spike annealing at 1050 degrees C. Cubic/tetragonal phases are also observed after laser annealing for 1.5 ms up to 1300 degrees C, demonstrating that the cubic/tetragonal phase is thermally stable in this temperature range.

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收藏

页码：243 / 251

页数：9

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