Theory of Large Intrinsic Spin Hall Effect in Iridate Semimetals

被引:41
作者
Patri, Adarsh S. [1 ,2 ]
Hwang, Kyusung [1 ,2 ,3 ]
Lee, Hyun-Woo [1 ,2 ,4 ,5 ]
Kim, Yong Baek [1 ,2 ]
机构
[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
[2] Univ Toronto, Ctr Quantum Mat, Toronto, ON M5S 1A7, Canada
[3] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[4] Pohang Univ Sci & Technol, PCTP, Pohang 37673, South Korea
[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 37673, South Korea
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
基金
新加坡国家研究基金会; 加拿大创新基金会; 加拿大自然科学与工程研究理事会;
关键词
TORQUE;
D O I
10.1038/s41598-018-26355-y
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of orthorhombic perovskite iridate with nonsymmorphic lattice symmetry, SrIrO3, which is a three-dimensional semimetal with nodal line spectrum. It is shown that large intrinsic spin Hall effect arises in this system via the spin-Berry curvature originating from the nearly degenerate electronic spectra surrounding the nodal line. This effect exists even when the nodal line is gently gapped out, due to the persistent nearly degenerate electronic structure. The magnitude of the spin Hall conductivity is shown to be comparable to the best known example such as doped topological insulators and the biggest in any transition metal oxides. To gain further insight, we compute the intrinsic spin Hall conductivity in both bulk and thin film systems. We find that the geometric confinement in thin films leads to significant modifications of the electronic states, leading to even bigger spin Hall conductivity in certain cases. We compare our findings with the recent experimental report on the discovery of large spin Hall effect in SrIrO3 thin films.
引用
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页数:10
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