Asymmetric high-frequency carrier-type magnetic field sensor with thin-film head structure

被引：1
|
作者：
Takezawa, M [1 ]
Dobashi, M
Yamasaki, J
机构：
[1] Kyushu Inst Technol, Dept Appl Sci Integrated Syst Engn, Grad Sch Engn, Kitakyushu, Fukuoka 8048550, Japan
[2] Kyushu Inst Technol, Fac Engn, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 04期
关键词：
exchange-coupling field; giant magnetoimpedance (GMI); thin-film head; unidirectional anisotropy;
D O I：
10.1109/TMAG.2004.830150
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An asymmetric giant magneto-impedance (GMI) sensor head consisting of ferro/antiferromagnetic exchange coupling multilayered films was fabricated, and its sensor characteristics were measured. Five 100-nm-thick ferromagnetic Ni-78-Fe-13-Cu-5-Mo-4 layers were multilayered between five 50-nm-thick antiferromagnetic Ir-22-Mn-78 layers by radio-frequency sputtering. The asymmetrical GMI characteristics and high sensitivity of 331 Omega/T were obtained with the sensor head. Moreover, it becomes clear that feedback control is possible with a conductive line fabricated on the sensor head. It is considered that small clearance between the sensor head and recording media can be realized by the thin-film head structure.
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页码：2679 / 2681
页数：3
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