Electroluminescence from Al0.3Ga0.7N epitaxial layers

被引：0

作者：

Kosyachenko, LA ^{[1
]}

Sletov, MM ^{[1
]}

Smirnov, VV ^{[1
]}

机构：

[1] TECH UNIV,MOSCOW INST ELECT ENGN,MOSCOW 103498,RUSSIA

来源：

INORGANIC MATERIALS | 1997年 / 33卷 / 08期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and electroluminescent properties of light-emitting diode structures prepared by vacuum evaporation of Au onto AlxGa1-xN (x = 0.2-0.3) epitaxial layers are studied. Comparison of the obtained results with optical and photoelectric data indicates the injection mechanism of electroluminescence from forward-biased diodes. At reverse bias, the observed emission is attributable to both intraband transitions of hot carriers and recombination of electrons with nonequilibrium holes resulting from impact ionization.

引用

页码：813 / 815

页数：3

共 11 条

[1] ADONIN AS, 1982, FIZ TEKH POLUPROV, V16, P1834
[2] Akasaki I., 1991, Memoirs of the Faculty of Engineering, Nagoya University, V43, P147
[3] Akasaki I., 1992, Optoelectronics - Devices and Technologies, V7, P49
[4] III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS
DAVIS, RF
[J]. PROCEEDINGS OF THE IEEE, 1991, 79 (05) : 702 - 712
[5] DIROCHKA AI, 1979, FIZ TEKH POLUPROV, V13, P196
[6] Gorbenko N.V., 1986, FTP, V20, P619
[7] EDGE EMISSION OF ALXGA1-XN
KHAN, MRH
KOIDE, Y
ITOH, H
SAWAKI, N
AKASAKI, I
[J]. SOLID STATE COMMUNICATIONS, 1986, 60 (06) : 509 - 512
[8] KORKOTSHVILI GA, 1984, FIZ TEKH POLUPROV, V18, P1462
[9] HOT-CARRIER OPTICAL-EMISSION IN SEMICONDUCTOR DIODES
KOSYACHENKO, LA
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 662 - 665
[10] Moss TS., 1973, SEMICONDUCTOR OPTOEL

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