Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method

被引：19

作者：

Kim, Kwang-Ho ^{[1
]}

Kwak, No-Won ^{[1
]}

Lee, Soo Hong ^{[2
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, Chungbuk, South Korea

[2] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2009年 / 5卷 / 02期

关键词：

MIS; Gallium nitride (GaN); Aluminum nitride (AlN); GaN MIS; AlN/GaN structure; Interface property; ALUMINUM NITRIDE;

D O I：

10.3365/eml.2009.06.083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN films on n-type GaN (0001) were prepared using a remote-plasma atomic-layer-deposition (RPALD) technique with a trimethylaluminum(TMA) precursor and nitrogen/hydrogen, argon/hydrogen radicals ranging in temperature from room temperature (RT) to 500 degrees C. The growth rate per cycle was varied with the substrate temperature from 2.3 angstrom/cycle at R. T. to 0.9 angstrom/cycle at 500 degrees C. X-ray diffraction results showed that the as-grown AlN films on GaN substrates had amorphous phase structures. The estimated interface trap density measured was about 2.4 x 10(11)/cm(2) eV at 1.08 eV below the conduction band edge. The leakage current densities measured at room temperature was about 5 x 10(-10) A/cm(2) under a field of 1 MV/cm.

引用

页码：83 / 86

页数：4

共 14 条

[1] Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures [J].

Aboelfotoh, MO ;

Kern, RS ;

Tanaka, S ;

Davis, RF ;

Harris, CI .

APPLIED PHYSICS LETTERS, 1996, 69 (19) :2873-2875

[2] High-quality oxide/nitride/oxide gate insulator for GaN MIS structures [J].

Gaffey, B ;

Guido, LJ ;

Wang, XW ;

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :458-464

[3] Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric [J].

Hashizume, T ;

Ootomo, S ;

Hasegawa, H .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2952-2954

[4] Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors [J].

Hu, X ;

Koudymov, A ;

Simin, G ;

Yang, J ;

Khan, MA ;

Tarakji, A ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2832-2834

[5]

Kim KH, 2006, J KOREAN PHYS SOC, V48, P275

[6] Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs [J].

Koudymov, A ;

Hu, XH ;

Simin, K ;

Simin, G ;

Ali, M ;

Yang, JW ;

Khan, MA .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) :449-451

[7] A novel program-erasable high-K A1N-Si MIS capacitor [J].

Lai, CH ;

Chin, A ;

Hung, BF ;

Cheng, CF ;

Yoo, WJ ;

Li, MF ;

Zhu, CX ;

McAlister, SP ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :148-150

[8]

Lee S, 2007, ELECTRON MATER LETT, V3, P17

[9] Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers [J].

Rossnagel, SM ;

Sherman, A ;

Turner, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04) :2016-2020

[10] Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C [J].

Scozzie, CJ ;

Lelis, AJ ;

McLean, FB ;

Vispute, RD ;

Choopun, S ;

Patel, A ;

Sharma, RP ;

Venkatesan, T .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :4052-4054

← 1 2 →