Effect of Annealing Temperature on the Structural and Optical Properties and Effect of Thickness on the Electrical Properties of Phosphorus Doped CdTe

Thin films were deposited at room temperature and annealed at 100 and 200 A degrees C. The particle size and the microstrain dependence on the temperature were studied by using Winfit Program. It was found that the particle size and the microstrain decrease with increasing the annealing temperature. Reflection and transmittance were recorded in the wavelength range (500-2500 nm). The type of electronic transition was determined; it was found that these films have direct allowed transition with an optical energy 1.64, 1.69 and 1.74 eV before and after annealing respectively. The Absorption index (k) and the refractive index (n) were measured before and after annealing. The electrical conductivity increases with increasing temperature in the (288-423)K range. Moreover, the electrical conductivity increases with increasing thickness.