Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

被引：14

作者：

Zhou Yu-Ming ^{[1
,2
]}

He Yi-Gang ^{[2
]}

Lu Ai-Xia ^{[1
]}

Wan Qing ^{[1
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect, Changsha 410082, Hunan, Peoples R China

[2] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China

来源：

CHINESE PHYSICS B | 2009年 / 18卷 / 09期

基金：

中国国家自然科学基金;

关键词：

simulation; ZnO thin film transistor; grain boundary; SINGLE GRAIN; TRAP STATES; CHANNEL; MOBILITY; TFT;

D O I：

10.1088/1674-1056/18/9/057

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.

引用

页码：3966 / 3969

页数：4

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