Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

被引：20

作者：

Chen, Xin ^{[1
,2
,3
]}

Zhong, Yaozong ^{[3
,4
]}

Zhou, Yu ^{[3
,4
,5
]}

Gao, Hongwei ^{[3
]}

Zhan, Xiaoning ^{[3
]}

Su, Shuai ^{[3
,4
]}

Guo, Xiaolu ^{[3
,4
]}

Sun, Qian ^{[3
,4
,5
]}

Zhang, Zihui ^{[1
,2
]}

Bi, Wengang ^{[1
,2
]}

Yang, Hui ^{[3
,4
]}

机构：

[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, 5340 Xiping Rd, Tianjin 300401, Peoples R China

[2] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin Key Lab Elect Mat & Devices, 5340 Xiping Rd, Tianjin 300401, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[4] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China

[5] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Foshan 528000, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 26期

关键词：

DYNAMIC R-ON; C-DOPED GAN; CURRENT COLLAPSE; ALGAN/GAN HEMTS; GATE; SUBSTRATE; SURFACE; GROWTH;

D O I：

10.1063/5.0031029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A room-temperature method to determine the trap energy levels in the carbon-doped (Al)GaN buffers is developed via a transient current measurement on the AlGaN/GaN high electron mobility transistors under back-gate voltages combined with a measurement of the buffer vertical leakage. Under high back-gate voltages, a linear relationship is obtained between the trap energy levels and the square roots of electric field strength, suggesting that the vertical conduction in the C-doped buffer follows the Poole-Frenkel law. The trap energy level in C-doped Al0.07Ga0.93N is finally determined to be 1.1eV through the established room-temperature approach, while that in C-doped GaN is extracted to be 0.9eV, both of which are related to the carbon impurities.

引用

页数：7

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