Intermediate ferroelectric phase driven ferroelectric-relaxor crossover and superior storage properties in phase boundary engineered BCZT ceramics

被引:16
作者
Nayak, R. L. [1 ]
Zhang, Yajun [2 ]
Dash, Sadhwi S. [1 ]
Sahoo, M. P. K. [1 ]
机构
[1] VSS Univ Technol, Dept Phys, Burla 768017, Odisha, India
[2] Lanzhou Univ, Coll Civil Engn & Mech, Dept Mech & Engn Sci, Lanzhou 730000, Gansu, Peoples R China
关键词
Powders; Defects; Ferroelectric properties; Perovskites; Functional applications; COLOSSAL DIELECTRIC PERMITTIVITY; PINNED DEFECT-DIPOLES; ELECTRICAL-PROPERTIES; CURIE-TEMPERATURE; LEAD; NB; POLARIZATION; BEHAVIOR; CATIONS; STRAIN;
D O I
10.1016/j.ceramint.2021.12.296
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Compositional tuning in materials at the morphotropic phase boundary has been a novel strategy to realize unprecedented and exotic physical properties. This work reports the structural, dielectric, electrical, and energy storage properties in lead-free BCZT (Ba0.85Ca0.15Zr0.1Ti0.9O3) at the morphotropic phase boundary (MPB) through compositional engineering at Ba-site. The polycrystalline samples of Ba0.85(1-x)(La1/2Na1/2)(0.85x)Ca0.15Zr0.1Ti0.9O3 (x = 0.0, 0.05, 0.075, 0.1) are synthesized by mechanical alloying followed by heating the samples at elevated temperatures. Rietveld refinement of powder X-ray diffraction patterns unveils coexisting ferroelectric P4mm (tetragonal) and ferroelectric R3m (Rhombohedral) symmetries, for samples x = 0.0-0.075. Intriguingly, the sample with x = 0.10 supports the inclusion of an intermediate ferroelectric phase with orthorhombic (Amm2) symmetry along with P4mm and R3m symmetries. Dielectric studies reveal a structurally coherent normal ferroelectric-ergodic relaxor crossover with Vogel-Fulcher type freezing of polar-nano-regions. Furthermore, the La/Na co-doping substantially enhances the recoverable energy density (W-rec); from 357 mJ/ cm(3) to 664 mJ/cm(3), reduces the loss energy density (W-L); from 101 mJ/cm(3) to 42 mJ/cm(3) and increases the storage efficiency (eta); from 77.9% to 94%. The doping-induced enhanced dielectric and storage properties are elucidated by impedance spectroscopy and density functional theory (DFT)-based calculations.
引用
收藏
页码:10803 / 10816
页数:14
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