Atomic-scale modeling of nanoconstrictions

被引：7

作者：

Mukherjee, S ^{[1
]}

Litvinov, D

Khizroev, S

机构：

[1] Univ Houston, Dept Elect & Comp Engn, Ctr Appl Nanomagnet, Houston, TX 77204 USA

[2] Florida Int Univ, Ctr Nanoscale Magnet Devices, Miami, FL 33174 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 04期

关键词：

localized domain wall; nanoconstriction; scattering; spin disorder;

D O I：

10.1109/tmag.2004.830159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a Heisenberg model along with Monte Carlo, it is demonstrated that localized domain walls can be formed inside nanoconstrictions. The origin of the localized domain wall lies in the competition between atomic-scale exchange and the shape anisotropy. This leads to high sensitivity of the domain wall width on the shape of the nanoconstriction. Moreover, it is shown that ferromagnetic ordering is considerably reduced in these localized domain walls.

引用

页码：2143 / 2145

页数：3

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