Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions

被引：3
作者：
Deiwiks, J.
Schiwietz, G.
Bhattacharyya, S. R.
Xiao, G.
Hippler, R.
机构：
[1] Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17487 Greifswald, Germany
[2] Inst Modern Phys, Lanzhou 730000, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 248卷 / 02期
关键词：
desorption; hydrogen; highly-charged ions; xenon; electronic sputtering;
D O I：
10.1016/j.nimb.2006.04.069
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report evidence for an enhanced desorption of hydrogen atoms from a Si(1 0 0) surface bombarded by 30 keV Xeq+ (q = 6-22) ions. The measured desorption yield amounts to 0.76 and 2.2 hydrogen atoms per incident Xe10+ and Xe18+ ion, respectively. For understanding the behaviour of hydrogen desorption from Si, another experiment was carried out to see the hydrogen signals as a function of time for about 140 min after deliberately introducing hydrogen into the target chamber and then shut off the valve. The results are discussed in the light of potential sputtering which essentially dominates for ions at higher charge states and the interpretation is supported by theoretical estimates. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：253 / 258
页数：6
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