Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions

被引：3

作者：

Deiwiks, J.

Schiwietz, G.

Bhattacharyya, S. R.

Xiao, G.

Hippler, R.

机构：

[1] Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17487 Greifswald, Germany

[2] Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 248卷 / 02期

关键词：

desorption; hydrogen; highly-charged ions; xenon; electronic sputtering;

D O I：

10.1016/j.nimb.2006.04.069

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report evidence for an enhanced desorption of hydrogen atoms from a Si(1 0 0) surface bombarded by 30 keV Xeq+ (q = 6-22) ions. The measured desorption yield amounts to 0.76 and 2.2 hydrogen atoms per incident Xe10+ and Xe18+ ion, respectively. For understanding the behaviour of hydrogen desorption from Si, another experiment was carried out to see the hydrogen signals as a function of time for about 140 min after deliberately introducing hydrogen into the target chamber and then shut off the valve. The results are discussed in the light of potential sputtering which essentially dominates for ions at higher charge states and the interpretation is supported by theoretical estimates. (c) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：253 / 258

页数：6

相关论文

共 29 条

[11] Quantitative study of adsorbate-adsorbate interactions of hydrogen on the Si(100) surface [J].

Hu, ZH ;

Biedermann, A ;

Knoesel, E ;

Heinz, TF .

PHYSICAL REVIEW B, 2003, 68 (15)

[12] BOMBARDMENT-INDUCED PHOTON EMISSION FROM A1 AND A12O3 TARGETS [J].

KELLY, R ;

KERKDIJK, CB .

SURFACE SCIENCE, 1974, 46 (02) :537-557

[13] Potential sputtering of proton from hydrogen-terminated Si(100) surfaces induced with slow highly charged ions [J].

Kuroki, K ;

Okabayashi, N ;

Torii, H ;

Komaki, K ;

Yamazaki, Y .

APPLIED PHYSICS LETTERS, 2002, 81 (19) :3561-3563

[14] DO HOLLOW ATOMS EXIST IN FRONT OF AN INSULATING LIF(100) SURFACE [J].

LIMBURG, J ;

SCHIPPERS, S ;

HOEKSTRA, R ;

MORGENSTERN, R ;

KURZ, H ;

AUMAYR, F ;

WINTER, HP .

PHYSICAL REVIEW LETTERS, 1995, 75 (02) :217-219

[15] PHOTON-STIMULATED AND ELECTRON-STIMULATED DESORPTION OF EXCITED ALKALI-METAL ATOMS FROM ALKALI-HALIDE SURFACES [J].

LIU, D ;

SEIFERT, N ;

MCCLURE, DJ ;

BARNES, AV ;

ALBRIDGE, RG ;

TOLK, NH ;

RUSSELL, D .

PHYSICAL REVIEW B, 1993, 47 (03) :1553-1566

[16]

MARTIN B, 1993, P 11 INT WORKSH EL C, P188

[17] EVIDENCE FOR ABOVE-SURFACE AND SUBSURFACE NEUTRALIZATION DURING INTERACTIONS OF HIGHLY CHARGED IONS WITH A METAL TARGET [J].

MEYER, FW ;

OVERBURY, SH ;

HAVENER, CC ;

VANEMMICHOVEN, PAZ ;

ZEHNER, DM .

PHYSICAL REVIEW LETTERS, 1991, 67 (06) :723-726

[18] Electronic desorption of alkyl monolayers from silicon by very highly charged ions [J].

Schenkel, T ;

Schneider, M ;

Hattass, M ;

Newman, MW ;

Barnes, AV ;

Hamza, AV ;

Schneider, DH ;

Cicero, RL ;

Chidsey, CED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3298-3300

[19] Femtosecond dynamics - snapshots of the early ion-track evolution [J].

Schiwietz, G ;

Czerski, K ;

Roth, M ;

Staufenbiel, F ;

Grande, PL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 225 (1-2) :4-26

[20] Atomic-scale desorption of H atoms from the Si(100)-2x1:H surface:: Inelastic electron interactions -: art. no. 035303 [J].

Soukiassian, L ;

Mayne, AJ ;

Carbone, M ;

Dujardin, G .

PHYSICAL REVIEW B, 2003, 68 (03)