Photoluminescence of Ga0.017Ge0.25As0.083S0.65 glasses doped with rare-earth ions

被引:0
作者
Iovu, M. S.
Syrbu, N. N.
Tver'Yanovich, Yu. S.
Adriaenssens, G. J.
机构
[1] ASM, IAP, Ctr Optoelect, MD-2028 Kishinev, Moldova
[2] St Petersburg State Univ, Russian Ctr Laser Phys, St Petersburg, Russia
[3] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Louvain, Belgium
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2006年 / 8卷 / 04期
关键词
chalcogenide glasses; photoluminescence; rare-earth ions;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The visible luminescence from Pr3+, Dy3+, Nd3+, Sm3+ and codoped with Ho3+ and Dy3+ ions embedded in Ga0.017Ge0.25As0.063S0.65 glass hosts at room temperature and at T=10 K is reported, when pumping with an Ar+-ion laser at lambda=488 nm. Fluorescence emissions at 1.3 mu m was observed for Dy3+ and both at 1.3 and at 1.5 mu m for Pr3+ doped glasses with wavelength pumping at 950 nm. Energy transfer from Ho3+:F-5(3) level to Dy3+:F-4(9/2) level increase the visible emission efficiency at 650 nm in the codoped glasses. The investigated Ga0.017Ge0.25As0.083S0.65 glasses doped with Pr3+ are promising amplifier materials for 1.3 and 1.5 mu m fiber optic telecommunication windows.
引用
收藏
页码:1341 / 1344
页数:4
相关论文
共 25 条
[1]  
Andriesh A, 2005, J OPTOELECTRON ADV M, V7, P2931
[2]  
[Anonymous], 1998, PROPERTIES PROCESSIN
[3]  
Balan V, 2004, J OPTOELECTRON ADV M, V6, P875
[4]  
Becker PC., 1999, Erbium-Doped Fiber Amplifiers: Fundamentals and Technology, Preface by E Snitzer
[5]   Emission properties of the Er3+:4I11/2 → 4I13/2 transition in Er3+- and Er3+/Tm3+-doped Ge-Ga-As-S glasses [J].
Choi, YG ;
Kim, KH ;
Lee, BJ ;
Shin, YB ;
Kim, YS ;
Heo, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 278 (1-3) :137-144
[6]  
Iovu M, 2005, J OPTOELECTRON ADV M, V7, P2323
[7]  
Iovu MS, 2005, J OPTOELECTRON ADV M, V7, P763
[8]  
Kozyukhin SA, 2005, J OPTOELECTRON ADV M, V7, P1457
[9]  
Lezal D, 2005, J OPTOELECTRON ADV M, V7, P2281
[10]  
Lezal D, 2004, J OPTOELECTRON ADV M, V6, P133