Photoluminescence of Ga0.017Ge0.25As0.083S0.65 glasses doped with rare-earth ions

被引：0

作者：

Iovu, M. S.

Syrbu, N. N.

Tver'Yanovich, Yu. S.

Adriaenssens, G. J.

机构：

[1] ASM, IAP, Ctr Optoelect, MD-2028 Kishinev, Moldova

[2] St Petersburg State Univ, Russian Ctr Laser Phys, St Petersburg, Russia

[3] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Louvain, Belgium

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2006年 / 8卷 / 04期

关键词：

chalcogenide glasses; photoluminescence; rare-earth ions;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The visible luminescence from Pr3+, Dy3+, Nd3+, Sm3+ and codoped with Ho3+ and Dy3+ ions embedded in Ga0.017Ge0.25As0.063S0.65 glass hosts at room temperature and at T=10 K is reported, when pumping with an Ar+-ion laser at lambda=488 nm. Fluorescence emissions at 1.3 mu m was observed for Dy3+ and both at 1.3 and at 1.5 mu m for Pr3+ doped glasses with wavelength pumping at 950 nm. Energy transfer from Ho3+:F-5(3) level to Dy3+:F-4(9/2) level increase the visible emission efficiency at 650 nm in the codoped glasses. The investigated Ga0.017Ge0.25As0.083S0.65 glasses doped with Pr3+ are promising amplifier materials for 1.3 and 1.5 mu m fiber optic telecommunication windows.

引用

页码：1341 / 1344

页数：4

共 25 条

[1] Andriesh A, 2005, J OPTOELECTRON ADV M, V7, P2931
[2] [Anonymous], 1998, PROPERTIES PROCESSIN
[3] Balan V, 2004, J OPTOELECTRON ADV M, V6, P875
[4] Becker PC., 1999, Erbium-Doped Fiber Amplifiers: Fundamentals and Technology, Preface by E Snitzer
[5] Emission properties of the Er3+:4I11/2 → 4I13/2 transition in Er3+- and Er3+/Tm3+-doped Ge-Ga-As-S glasses
Choi, YG
Kim, KH
Lee, BJ
Shin, YB
Kim, YS
Heo, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 278 (1-3) : 137 - 144
[6] Iovu M, 2005, J OPTOELECTRON ADV M, V7, P2323
[7] Iovu MS, 2005, J OPTOELECTRON ADV M, V7, P763
[8] Kozyukhin SA, 2005, J OPTOELECTRON ADV M, V7, P1457
[9] Lezal D, 2005, J OPTOELECTRON ADV M, V7, P2281
[10] Lezal D, 2004, J OPTOELECTRON ADV M, V6, P133

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