The microstructure and properties of energetically deposited carbon nitride films

被引:6
作者
Sadek, A. Z. [1 ,2 ]
Kracica, M. [1 ]
Moafi, A. [1 ]
Lau, D. W. M. [1 ]
Partridge, J. G. [1 ]
McCulloch, D. G. [1 ]
机构
[1] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia
[2] Deakin Univ, Inst Frontier Mat, Waurn Ponds, Vic 3216, Australia
关键词
Carbon nitride; CNx; Energetic deposition; N-doped carbon; Cathodic arc; ABSORPTION FINE-STRUCTURE; THIN-FILMS; OPTICAL-PROPERTIES; NITROGEN; HARDNESS; NEXAFS; RAMAN;
D O I
10.1016/j.diamond.2014.03.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The intrinsic stress, film density and nitrogen content of carbon nitride (CNx) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CNx including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (similar to 30%) was deposited at room temperature with 1.0 mTorr N-2 pressure and using an intermediate bias of -400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 degrees C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon-nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (similar to 50 GPa) to softer and highly ductile CNx which contained tangled graphite-like sheets. Through-film current-voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:58 / 63
页数:6
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