Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET

被引：4

作者：

Banerjee, Pritha ^{[1
]}

Sarkar, Subir Kumar ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 117卷

关键词：

Trapezoidal FinFET; Strained Silicon; Short channel effects; Subthreshold swing; Threshold voltage roll-off;

D O I：

10.1016/j.spmi.2018.02.034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current research highlights the subthreshold short channel characteristics of a novel structure namely Dual-material gate strained Trapezoidal strained FinFET. Based on the effective channel width and equivalent number of gates (ENG), we have developed a quasi 3-D scaling length model and examined device characteristics like potential and electric field. The response of the device towards the various short channel effects has also been studied in depth. The analytical results obtained have been verified using 3-D numerical device simulation results. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：527 / 537

页数：11

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