Ultra-low Resistance NiGeAu and PdGeAu Ohmic Contacts On N-GaSb Grown On GaAs

被引：0

作者：

Rahimi, Nassim ^{[1
]}

Aragon, Andrew A. ^{[1
]}

Romero, Orlando S. ^{[1
]}

Shima, Darryl M. ^{[1
]}

Rotter, Tom J. ^{[1
]}

Balakrishnan, Ganesh ^{[1
]}

Mukherjee, Sayan D. ^{[1
]}

Lester, Luke F. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

ohmic contacts; gallium antimonide; interfacial misfit dislocation; thermophotovoltaic cells; GALLIUM ANTIMONIDE; P-TYPE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ultra-low resistance ohmic contacts on n-GaSb with specific transfer resistances down to 0.12 Omega-mm and specific contact resistances of similar to 1.1e-6 Omega-cm(2) have been successfully fabricated on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. The IMF technique enables epitaxial growth of GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally similar to 1e17 cm(-3) p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. The low annealing temperature of NiGeAu and PdGeAu metallizations show promising results, but the lifetime of a device with these contacts have not yet been studied.

引用

页码：2123 / 2126

页数：4

共 12 条

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