HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

被引：1

作者：

Kallinger, Birgit ^{[1
]}

Ehlers, Christian ^{[1
]}

Berwian, Patrick ^{[1
]}

Rommel, Mathias ^{[1
]}

Friedrich, Jochen ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC epitaxy; CVD; chloride assisted growth; carrier lifetime; SILICON-CARBIDE; CARRIER LIFETIME; DEFECTS;

D O I：

10.4028/www.scientific.net/MSF.778-780.210

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 mu m/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 10(13) cm(-3). But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z(1/2). For low growth rates, the Z(1/2) concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z(1/2) concentration increases with increasing HCl addition.

引用

收藏

页码：210 / 213

页数：4

相关论文

共 9 条

[1] Carrier lifetime analysis by microwave photoconductive decay (μ-PCD) for 4H SiC epitaxial wafers [J].

Chung, G. ;

Loboda, M. J. ;

MacMillan, M. F. ;

Wan, J. ;

Hansen, D. M. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :323-326

[2] THE SURFACE-TENSION OF LIQUID SILICON [J].

HARDY, SC .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :456-460

[3] Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates [J].

Kallinger, Birgit ;

Berwian, Patrick ;

Friedrich, Jochen ;

Thomas, Bernd .

JOURNAL OF CRYSTAL GROWTH, 2013, 381 :127-133

[4] Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC [J].

Kallinger, Birgit ;

Berwian, Patrick ;

Friedrich, Jochen ;

Rommel, Mathias ;

Azizi, Maral ;

Hecht, Christian ;

Friedrichs, Peter .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :633-+

[5] Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation [J].

Kimoto, Tsunenobu ;

Danno, Katsunori ;

Suda, Jun .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07) :1327-1336

[6] Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications [J].

Pedersen, Henrik ;

Leone, Stefano ;

Kordina, Olof ;

Henry, Anne ;

Nishizawa, Shin-ichi ;

Koshka, Yaroslav ;

Janzen, Erik .

CHEMICAL REVIEWS, 2012, 112 (04) :2434-2453

[7] Density measurement of molten silicon by a pycnometric method [J].

Sato, Y ;

Nishizuka, T ;

Hara, K ;

Yamamura, T ;

Waseda, Y .

INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2000, 21 (06) :1463-1471

[8] Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å [J].

Sridhara, SG ;

Devaty, RP ;

Choyke, WJ .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2963-2964

[9] Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition [J].

Vorob'ev, AN ;

Komissarov, AE ;

Segal, AS ;

Makarov, YN ;

Karpov, SY ;

Zhmakin, AI ;

Rupp, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :176-178