Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

被引：122
作者：
Taraschi, G [1 ]
Pitera, AJ [1 ]
Fitzgerald, EA [1 ]
机构：
[1] MIT, Cambridge, MA 02139 USA
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 08期
关键词：
strained; silicon; insulator; SSOI; SGOI; GOI;
D O I：
10.1016/j.sse.2004.01.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on-insulator. Wafer bonding with stop layers is found to be the most general approach with the ability to create ultra-thin layers of strained Si, SiGe, and Ge on-insulator with low threading dislocation densities and precise control over layer thickness. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1297 / 1305
页数：9
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