Hybrid superconducting-magnetic memory device using competing order parameters

被引：193

作者：

Baek, Burm ^{[1
]}

Rippard, William H. ^{[1
]}

Benz, Samuel P. ^{[1
]}

Russek, Stephen E. ^{[1
]}

Dresselhaus, Paul D. ^{[1
]}

机构：

[1] NIST, Boulder, CO 80305 USA

来源：

NATURE COMMUNICATIONS | 2014年 / 5卷

关键词：

D O I：

10.1038/ncomms4888

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

引用

页数：6

共 41 条

[21] Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature [J].