Optical properties and carrier dynamics of self-assembled GaN/Al0.11Ga0.89N quantum dots

被引：5
作者：
Ke, W. C. [1 ]
Fu, C. P.
Huang, C. C.
Ku, C. S.
Lee, L.
Chen, C. Y.
Tsai, W. C.
Chen, W. K.
Lee, M. C.
Chou, W. C.
Lin, W. J.
Cheng, Y. C.
机构：
[1] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan
[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 10期
关键词：
D O I：
10.1088/0957-4484/17/10/027
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
GaN quantum dots were grown on an Al0.11Ga0.89N buffer layer by using flow rate modulation epitaxy. The Stranski-Krastanov growth mode was identified by an atomic force microscopy study. The thickness of the wetting layer is about 7.2 monolayers. The temperature dependent photoluminescence studies showed that at low temperature the localization energy, which accounts for de-trapping of excitons, decreases with the reducing dot size. The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (VN) state of the Al0.11Ga0.89N barrier layer. The activation energy decreases with reducing dot size.
引用
收藏
页码：2609 / 2613
页数：5
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