MBE-grown 232-270nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

被引：103

作者：

Islam, S. M. ^{[1
]}

Lee, Kevin ^{[1
]}

Verma, Jai ^{[3
,5
]}

Protasenko, Vladimir ^{[1
]}

Rouvimov, Sergei ^{[4
]}

Bharadwaj, Shyam ^{[1
]}

Xing, Huili ^{[1
,2
]}

Jena, Debdeep ^{[1
,2
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[4] Univ Notre Dame, Notre Dame Integrated Imaging Facil, Notre Dame, IN 46556 USA

[5] Intel Corp, Hillsboro, OR 97124 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 04期

关键词：

WAVELENGTH;

D O I：

10.1063/1.4975068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrically injected deep ultra-violet emission is obtained using monolayer thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy. Single peaked emission spectra are achieved with narrow full width at half maximum for three different light emitting diodes operating at 232 nm, 246 nm, and 270 nm. 232 nm (5.34 eV) is the shortest electroluminescence (EL) emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping. Published by AIP Publishing.

引用

页数：5

共 29 条

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