Two-dimensional (2D) CuO layered oval nanosheets and three-dimensional (3D) nanoellipsoids were grown on a large scale at similar to 65 degrees C by a facile template-free method. Shape and dimensionality control of well-defined CuO single crystals could be achieved by simple variations of pH value. At pH 8.5, CuO nanosheets were obtained, whereas at pH 7.5, CuO nanoellipsoids were formed. XRD, SEM, TEM, and HRTEM were used to characterize the products. The growth mechanisms were discussed by monitoring the early growth stages. It was shown that the CuO nanoarchitectures were formed through oriented attachment of tiny single-crystal nanoribbons and nanoparticles. UV-vis spectra were employed to estimate the band gap energies of the nanosized semiconductors. Further control experiments involving changing the growth temperature and alkaline reactant were also carried out to prepare other ultrafine nanoarchitectures. Our work demonstrates the growth of single-crystal CuO architectures built from 0D and 1D nanocrystals through a one-step solution-phase chemical route under controlled conditions.
机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Cao, MH
Liu, TF
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Liu, TF
Gao, S
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Gao, S
Sun, GB
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Sun, GB
Wu, XL
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Wu, XL
Hu, CW
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NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R ChinaNE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Hu, CW
Wang, ZL
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
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IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
Talapin, DV
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
Gaschler, W
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
Murray, CB
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Cao, MH
Liu, TF
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Liu, TF
Gao, S
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h-index: 0
机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Gao, S
Sun, GB
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机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Sun, GB
Wu, XL
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h-index: 0
机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Wu, XL
Hu, CW
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h-index: 0
机构:
NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R ChinaNE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
Hu, CW
Wang, ZL
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h-index: 0
机构:NE Normal Univ, Inst Polyoxometalate Chem, Changchun 130024, Peoples R China
机构:
IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
Talapin, DV
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
Gaschler, W
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
Murray, CB
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA