Fabrication of AlInGaN-based blue-violet laser diode with low input power

被引：6

作者：

Kwak, JS ^{[1
]}

Jang, T ^{[1
]}

Choi, KK ^{[1
]}

Sung, YJ ^{[1
]}

Kim, YH ^{[1
]}

Chae, S ^{[1
]}

Lee, SN ^{[1
]}

Ha, KH ^{[1
]}

Nam, OH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress on the fabrication processes of blue-violet laser diodes (BV-LDs) which reduced input power and enhanced heat dissipation has been discussed. In order to reduce operating current of the BV-LDs, a novel ridge waveguide structure with two different side angles was developed, and ridge width and thickness between active layer and etched surface wais optimized, as well. For lowering of operating voltage, we optimized the thickness of the highly Mg doped p-GaN contact layer, where the ohmic metals were contacted, as well as pre-treatment process before deposition of p-electrode. Improving the fabrication processes for high power AlInGaN-based BV-LDs as well as optimizing design and growth conditions for BV-LD structures resulted in a threshold current density and a threshold voltage of 3.3 kA/cm(2) and 4.4 V, respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2649 / 2652

页数：4

共 6 条

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[2]

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[3]

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