Terahertz probe of nonequilibrium carrier dynamics and ultrafast photocurrents in the topological insulator Sb2Te3

被引：28

作者：

Ruan, Shunyi ^{[1
]}

Lin, Xian ^{[1
]}

Chen, Haiyang ^{[1
]}

Song, Bangju ^{[1
]}

Dai, Ye ^{[1
]}

Yan, Xiaona ^{[1
]}

Jin, Zuanming ^{[1
]}

Ma, Guohong ^{[1
,2
]}

Yao, Jianquan ^{[3
]}

机构：

[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[2] SIOM & STU Joint Lab Superintense Lasers & Applic, Shanghai 201210, Peoples R China

[3] Tianjin Univ, Coll Precis Instrument & Optoelect Engn, Inst Laser & Optoelect, Tianjin 300072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 01期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; GENERATION; SURFACE;

D O I：

10.1063/5.0027930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we report the ultrafast excitation and dynamics of the carrier and photocurrent in a 3D typical topological insulator Sb2Te3. We utilize time-resolved optical pump-THz probe spectroscopy to explore the nonequilibrium carrier dynamics of Sb2Te3. The electron system undergoes an ultrafast relaxation and releases through intra-band and inter-band scattering. Additionally, THz emission spectroscopy is employed to investigate the different ultrafast photocurrents in Sb2Te3 through tuning the polarization of excitation pulses and rotating the sample's azimuthal angle. We distinguish the different ultrafast photocurrents driven by the linear photogalvanic effect, circular photogalvanic effect, and thermoelectric effect. Our results potentially enable an all-optical modulation of THz emission without any external bias field, which could play an important role in the development of topological insulator-based high-speed THz optoelectronic and opto-spintronic devices.

引用

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