Scanning thermal microscopy with heat conductive nanowire probes

被引:18
作者
Timofeeva, Maria [1 ,4 ]
Bolshakov, Alexey [1 ]
Tovee, Peter D. [2 ]
Zeze, Dagou A. [3 ,4 ]
Dubrovskii, Vladimir G. [1 ,4 ]
Kolosov, Oleg V. [2 ]
机构
[1] Russian Acad Sci, Nanotechnol Ctr, Lab Phys Nanostruct, St Petersburg Phys & Technol Ctr Res & Educ, 8,Bld 3 Khlopina, St Petersburg 194021, Russia
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4Y8, England
[3] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England
[4] St Petersburg Natl Res Univ Informat Technol Mech, Kronverkskiy Pr 49, St Petersburg 197101, Russia
基金
英国工程与自然科学研究理事会; 俄罗斯科学基金会;
关键词
Scanning thermal microscopy; SThM; Nanoscale imaging; Thermal conductivity; Contact thermal resistance; Carbon nanotubes; Nanowires; RESISTANCE; TRANSPORT; GRAPHENE;
D O I
10.1016/j.ultramic.2015.12.006
中图分类号
TH742 [显微镜];
学科分类号
摘要
Scanning thermal microscopy (SThM), which enables measurement of thermal transport and temperature distribution in devices and materials with nanoscale resolution is rapidly becoming a key approach in resolving heat dissipation problems in modern processors and assisting development of new thermoelectric materials. In SThM, the self-heating thermal sensor contacts the sample allowing studying of the temperature distribution and heat transport in nanoscaled materials and devices. The main factors that limit the resolution and sensitivities of SThM measurements are the low efficiency of thermal coupling and the lateral dimensions of the probed area of the surface studied. The thermal conductivity of the sample plays a key role in the sensitivity of SThM measurements. During the SThM measurements of the areas with higher thermal conductivity the heat flux via SThM probe is increased compared to the areas with lower thermal conductivity. For optimal SThM measurements of interfaces between low and high thermal conductivity materials, well defined nanoscale probes with high thermal conductivity at the probe apex are required to achieve a higher quality of the probe-sample thermal contact while preserving the lateral resolution of the system. In this paper, we consider a SThM approach that can help address these complex problems by using high thermal conductivity nanowires (NW) attached to a tip apex. We propose analytical models of such NW-SThM probes and analyse the influence of the contact resistance between the SThM probe and the sample studied. The latter becomes particularly important when both tip and sample surface have high thermal conductivities. These models were complemented by finite element analysis simulations and experimental tests using prototype probe where a multiwall carbon nanotube (MWCNT) is exploited as an excellent example of a high thermal conductivity NW. These results elucidate critical relationships between the performance of the SThM probe on one hand and thermal conductivity, geometry of the probe and its components on the other. As such, they provide a pathway for optimizing current SThM for nanothermal studies of high thermal conductivity materials. Comparison between experimental and modeling results allows us to provide direct estimates of the contact thermal resistances for various interfaces such as MWCNT-Al (5 x 10(-9) +/- 1 x 10(-9) K m(2) W-1), Si3N4-Al (6 x 10(-8) +/- 2.5 x 10(-8) K m(2) W-1) and Si3N4-graphene (similar to 10(-8) K m(2) W-1). It was also demonstrated that the contact between the MWCNT probe and Al is relatively perfect, with a minimal contact resistance. In contrast, the thermal resistance between a standard Si3N4 SThM probe and Al is an order of magnitude higher than reported in the literature, suggesting that the contact between these materials may have a multi-asperity nature that can significantly degrade the contact resistance. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:42 / 51
页数:10
相关论文
共 43 条
[1]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[2]  
Balandin AA, 2011, NAT MATER, V10, P569, DOI [10.1038/nmat3064, 10.1038/NMAT3064]
[3]   Heat conduction across a solid-solid interface: Understanding nanoscale interfacial effects on thermal resistance [J].
Balasubramanian, Ganesh ;
Puri, Ishwar K. .
APPLIED PHYSICS LETTERS, 2011, 99 (01)
[4]   Design challenges of technology scaling [J].
Borkar, S .
IEEE MICRO, 1999, 19 (04) :23-29
[5]   Nanoscale thermal transport [J].
Cahill, DG ;
Ford, WK ;
Goodson, KE ;
Mahan, GD ;
Majumdar, A ;
Maris, HJ ;
Merlin, R ;
Phillpot, SR .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :793-818
[6]   Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition [J].
Cai, Weiwei ;
Moore, Arden L. ;
Zhu, Yanwu ;
Li, Xuesong ;
Chen, Shanshan ;
Shi, Li ;
Ruoff, Rodney S. .
NANO LETTERS, 2010, 10 (05) :1645-1651
[7]   Quantitative temperature measurement of an electrically heated carbon nanotube using the null-point method [J].
Chung, Jaehun ;
Kim, Kyeongtae ;
Hwang, Gwangseok ;
Kwon, Ohmyoung ;
Jung, Seungwon ;
Lee, Junghoon ;
Lee, Jae Woo ;
Kim, Gyu Tae .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (11)
[8]   Ultrasonic study of the temperature and pressure dependences of the elastic properties of β-silicon nitride ceramic [J].
Dodd, SP ;
Cankurtaran, M ;
Saunders, GA ;
James, B .
JOURNAL OF MATERIALS SCIENCE, 2001, 36 (10) :2557-2563
[9]   Nanoscale Thermal AFM of Polymers: Transient Heat Flow Effects [J].
Duvigneau, Joost ;
Schonherr, Holger ;
Vancso, G. Julius .
ACS NANO, 2010, 4 (11) :6932-6940
[10]   Growth and morphology control of carbon nanotubes at the apexes of pyramidal silicon tips [J].
Edgeworth, J. P. ;
Burt, D. P. ;
Dobson, P. S. ;
Weaver, J. M. R. ;
Macpherson, J. V. .
NANOTECHNOLOGY, 2010, 21 (10)