High efficiency linear power amplifier for IEEE 802.11g WLAN applications

被引：13
|
作者：
Huang, Chien-Chang [1 ]
Chen, Wei-Ting [1 ]
Chen, Kuan-Yu [1 ]
机构：
[1] Yuan Ze Univ, Dept Commun Engn, Tao Yuan, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 09期
关键词：
heterojunction bipolar transistor (HBT); power-aided efficiency (PAE); power amplifier (PA); wireless local area network (WLAN);
D O I：
10.1109/LMWC.2006.880702
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the power amplifier (PA) design for IEEE 802.11g WLAN applications by using InGaP/GaAs heterojunction bipolar transistors (HBTs) with the dual bias network as the linearizer to improve the output power capability and linearity. The final designed PA utilizes a 3.3-V supply voltage producing a good power-aided-efficiency (PAE) in 39.3% with 26.5-dBm output power and 18.1-dB gain for a 2.4-GHz OFDM/64-QAM stimulus, while the error vector magnitude (EVM) is maintained at 4.9%, satisfying the standard specifications.
引用
收藏
页码：508 / 510
页数：3
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