Higher resistivities obtained by iron-diffusion into undoped semi-insulating GaAs

被引:3
|
作者
Ohsawa, J [1 ]
Ozaki, Y [1 ]
Misaki, T [1 ]
机构
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 1AB期
关键词
gallium arsenide; semi-insulating; LEC; iron; diffusion; compensation; EL2;
D O I
10.1143/JJAP.39.L13
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple diffusion process at low temperatures of 500-550 degrees C can increase the resistivity of GaAs by one order of magnitude; deep accepters of iron on the order of 10(14) cm(-3) were introduced into liquid encapsulated Czochralski(LEC)-grown GaAs wafers from a spin-on source to obtain higher resistivity in the range of 10(8) Omega.cm. Control of the Fermi level onto the middle of the energy gap was accomplished by compensating deep donors of electron level No. 2 (EL2) by the accepters located at E-t - E-v = 0.46 eV. A calculation based on carrier-compensation concurs with the trend in the resistivity variation experimentally obtained by iron-diffusion in the temperature range of 450-600 degrees C.
引用
收藏
页码:L13 / L15
页数:3
相关论文
共 50 条
  • [21] PHOTOINDUCED TRANSIENT SPECTROSCOPY (PITS) STUDY ON UNDOPED SEMI-INSULATING GAAS
    FANG, Z
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S39 - S40
  • [22] Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals
    Glinchuk, KD
    Litovchenko, NM
    Prokhorovich, AV
    Stril'chuk, ON
    SEMICONDUCTORS, 2000, 34 (11) : 1259 - 1263
  • [23] EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED, SEMI-INSULATING GaAs.
    Ta, L.B.
    Hobgood, H.M.
    Rohatgi, A.
    Thomas, R.N.
    1600, (53):
  • [24] STRIATION ETCHING OF UNDOPED, SEMI-INSULATING LEC-GROWN GAAS
    MIYAZAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 459 - 461
  • [25] Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs
    Kovalenko, VF
    Litvinova, MB
    Shutov, SV
    SEMICONDUCTORS, 2002, 36 (02) : 167 - 170
  • [26] UNDOPED SEMI-INSULATING GAAS OF VERY LOW RESIDUAL ACCEPTOR CONCENTRATION
    REICHLMAIER, S
    LOHNERT, K
    BAUMGARTNER, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (12): : 2329 - 2332
  • [27] STATES OF COPPER DURING DIFFUSION IN SEMI-INSULATING GAAS
    TIN, CC
    TEH, CK
    WEICHMAN, FL
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 355 - 359
  • [28] Field effect on positron diffusion in semi-insulating GaAs
    Shan, YY
    AsokaKumar, P
    Lynn, KG
    Fung, S
    Beling, CD
    PHYSICAL REVIEW B, 1996, 54 (03): : 1982 - 1986
  • [29] Defects in undoped semi-insulating InP
    Chen Yan
    Guo Xin
    SELECTED PAPERS FROM CONFERENCES OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE OF THE CHINESE SOCIETY OF ASTRONAUTICS: OPTICAL IMAGING, REMOTE SENSING, AND LASER-MATTER INTERACTION 2013, 2014, 9142
  • [30] Analysis of changes in the intensity of the intrinsic luminescence after the copper diffusion into semi-insulating undoped GaAs crystals
    Glinchuk, KD
    Prokhorovich, AV
    Vorobkalo, FM
    CRYSTAL RESEARCH AND TECHNOLOGY, 1998, 33 (05) : 833 - 839