Higher resistivities obtained by iron-diffusion into undoped semi-insulating GaAs

被引：3

作者：

Ohsawa, J ^{[1
]}

Ozaki, Y ^{[1
]}

Misaki, T ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 1AB期

关键词：

gallium arsenide; semi-insulating; LEC; iron; diffusion; compensation; EL2;

D O I：

10.1143/JJAP.39.L13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple diffusion process at low temperatures of 500-550 degrees C can increase the resistivity of GaAs by one order of magnitude; deep accepters of iron on the order of 10(14) cm(-3) were introduced into liquid encapsulated Czochralski(LEC)-grown GaAs wafers from a spin-on source to obtain higher resistivity in the range of 10(8) Omega.cm. Control of the Fermi level onto the middle of the energy gap was accomplished by compensating deep donors of electron level No. 2 (EL2) by the accepters located at E-t - E-v = 0.46 eV. A calculation based on carrier-compensation concurs with the trend in the resistivity variation experimentally obtained by iron-diffusion in the temperature range of 450-600 degrees C.

引用

页码：L13 / L15

页数：3

共 12 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[2]

FISHER DJ, 1998, DIFFUSION GAAS OTHER, P289

[3] IRON DOPED BULK SEMIINSULATING GAAS [J].

GRAY, ML ;

PETERSON, L ;

TANG, RS ;

SABAN, SB ;

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3319-3325

[4] DETAILED ELECTRICAL CHARACTERIZATION OF THE DEEP CR ACCEPTOR IN GAAS [J].

MARTIN, GM ;

MITONNEAU, A ;

PONS, D ;

MIRCEA, A ;

WOODARD, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (20) :3855-3882

[5] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[6] THE EFFECT OF LONG-TERM ANNEALING ON THE ELECTRICAL-PROPERTIES OF SI-GAAS [J].

NAKAMURA, Y ;

OHTSUKI, Y ;

KIKUTA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06) :L1148-L1150

[7] EFFECT OF CARBON CONCENTRATION ON THERMAL-CONVERSION IN SEMIINSULATING GAAS [J].

OBOKATA, T ;

OKADA, H ;

KATSUMATA, T ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L179-L181

[8] DIFFUSION OF IRON INTO GAAS FROM A SPIN-ON SOURCE [J].

OHSAWA, J ;

KAKINOKI, H ;

IKEDA, H ;

MIGITAKA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (08) :2608-2611

[9] IRON CONCENTRATIONS IN GAAS DIFFUSED FROM A SPIN-ON FILM [J].

OHSAWA, J ;

NAKAMURA, M ;

NEKADO, Y ;

MIGITAKA, M ;

TSUCHIDA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (5B) :L600-L602

[10]

OTOKI Y, 1992, HITACHI CABLE REV, V11, P37

← 1 2 →