Early nucleation on the Si(001)-2 x 1 surface

被引:16
作者
Pi, TW
Ouyang, CP
Wen, JF
Tien, LC
Hwang, J
Cheng, CP
Wertheim, GK
机构
[1] Synchrotron Radiat Res Ctr, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[3] Natl Chiayi Univ, Dept Appl Phys, Chiayi, Taiwan
[4] Woodland Consulting, Morristown, NJ 07960 USA
关键词
photoelectron spectroscopy; silicon; chlorine; germanium; oxygen; growth; single crystal epitaxy;
D O I
10.1016/S0039-6028(02)01648-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The analysis of synchrotron radiation Si 2p core-level photoemission spectra provides fruitful information about the interface structure. A constraint on layer-wise intensities, based on the inelastic mean-free-path, is used to extract the 2p binding energy shifts of the first three outer layers. Both clean and adsorbate-covered surfaces have been successfully analyzed. The results for the clean Si(001)-2 x 1 surface, which reflect both the strain due to the reconstruction and changes in final-state screening, are in very good agreement with theory. However, for adsorbate-covered surfaces charge-flow, due to the electronegativity difference between Si and adsorbate atoms, dominates the shifts. Results for prototypical interfaces, with the adsorbates Ge, Cl, and oxygen, are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:327 / 331
页数:5
相关论文
共 12 条
[1]   CORE-LEVEL SPECTROSCOPY OF THE CLEAN SI(001) SURFACE - CHARGE-TRANSFER WITHIN ASYMMETRIC DIMERS OF THE 2X1 AND C(4X2) RECONSTRUCTIONS [J].
LANDEMARK, E ;
KARLSSON, CJ ;
CHAO, YC ;
UHRBERG, RIG .
PHYSICAL REVIEW LETTERS, 1992, 69 (10) :1588-1591
[2]   Surface atomic geometry of Si(001)-(2x1): A low-energy electron-diffraction structure analysis [J].
Over, H ;
Wasserfall, J ;
Ranke, W ;
Ambiatello, C ;
Sawitzki, R ;
Wolf, D ;
Moritz, W .
PHYSICAL REVIEW B, 1997, 55 (07) :4731-4736
[3]  
PADOVA PD, 1998, PHYS REV LETT, V81, P2320
[4]   EVIDENCE FOR SITE-SENSITIVE SCREENING OF CORE HOLES AT THE SI AND GE (001) SURFACE [J].
PEHLKE, E ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1993, 71 (14) :2338-2341
[5]   Growth of the Ge overlayer on Si(100)-(2 x 1) [J].
Pi, TW ;
Wu, RT ;
Ouyang, CP ;
Wen, JF ;
Wertheim, GK .
SURFACE SCIENCE, 2000, 461 (1-3) :L565-L569
[6]   Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon [J].
Pi, TW ;
Hong, IH ;
Cheng, CP ;
Wertheim, GK .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2000, 107 (02) :163-176
[7]   Surface core-level shifts of Ge(100)-2X1 [J].
Pi, TW ;
Wen, JF ;
Ouyang, CP ;
Wu, RT .
PHYSICAL REVIEW B, 2001, 63 (15)
[8]   Adsorption of chlorine on the Si(001)-2 x 1 surface [J].
Pi, TW ;
Tsai, SF ;
Ouyang, CP ;
Wen, JF ;
Wu, RT .
SURFACE SCIENCE, 2001, 488 (03) :387-392
[9]   Oxidation of Si(001)-2 x 1 [J].
Pi, TW ;
Wen, JF ;
Ouyang, CP ;
Wu, RT ;
Wertheim, GK .
SURFACE SCIENCE, 2001, 478 (1-2) :L333-L338
[10]   High-resolution core-level studies of silicon surfaces [J].
Uhrberg, RIG ;
Landemark, E ;
Chao, YC .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 75 :197-207