Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit

被引：7
|
作者：
Noh, Younsub [1 ]
Chang, Dongpil [1 ]
Yom, In-Bok [1 ]
机构：
[1] ETRI, Broadcasting & Telecommun Convergence Res Lab, Taejon, South Korea
来源：
ETRI JOURNAL | 2009年 / 31卷 / 03期
关键词：
Bias circuit; compensation; driver amplifier; Ku-band; pHEMT; MMIC; power amplifier; supply voltage; temperature; threshold voltage;
D O I：
10.4218/etrij.09.0108.0704
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 mu m GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.
引用
收藏
页码：247 / 253
页数：7
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