Diffusion, trapping, and relaxation of Mu(+) and Mu(-) heavily-doped GaAs

被引：11

作者：

Chow, KH

Cox, SFJ

Davis, EA

Dunsiger, SR

Estle, TL

Hitti, B

Kiefl, RF

Lichti, RL

机构：

[1] RUTHERFORD APPLETON LAB,ISIS,DIDCOT OX11 0QX,OXON,ENGLAND

[2] UNIV LEICESTER,DEPT PHYS,LEICESTER LE1 7RH,LEICS,ENGLAND

[3] UNIV BRITISH COLUMBIA,VANCOUVER,BC V6T 1Z1,CANADA

[4] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251

[5] TRIUMF,VANCOUVER,BC V6T 2A3,CANADA

[6] TEXAS TECH UNIV,DEPT PHYS,LUBBOCK,TX 79409

来源：

HYPERFINE INTERACTIONS | 1997年 / 105卷 / 1-4期

关键词：

D O I：

10.1023/A:1012676026555

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

The diamagnetic muonium states in heavily doped GaAs are investigated with a combination of transverse-field and longitudinal-field mu SR techniques. In metallic n-type GaAs, formation of Mu(-) occurs because of the high Fermi energy. This analog of the hydride ion (H-) is located in a T-Ga interstice where it is essentially immobile up to about 500 K. At higher temperatures, Mu(T) acts as an electron-hole recombination center. In p-type GaAs, Mu(+) traps at two different sites, one at low temperatures and a second at higher temperatures after detrapping from the first.

引用

页码：309 / 314

页数：6

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