Diffusion, trapping, and relaxation of Mu(+) and Mu(-) heavily-doped GaAs

被引：11
作者：
Chow, KH
Cox, SFJ
Davis, EA
Dunsiger, SR
Estle, TL
Hitti, B
Kiefl, RF
Lichti, RL
机构：
[1] RUTHERFORD APPLETON LAB,ISIS,DIDCOT OX11 0QX,OXON,ENGLAND
[2] UNIV LEICESTER,DEPT PHYS,LEICESTER LE1 7RH,LEICS,ENGLAND
[3] UNIV BRITISH COLUMBIA,VANCOUVER,BC V6T 1Z1,CANADA
[4] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251
[5] TRIUMF,VANCOUVER,BC V6T 2A3,CANADA
[6] TEXAS TECH UNIV,DEPT PHYS,LUBBOCK,TX 79409
来源：
HYPERFINE INTERACTIONS | 1997年 / 105卷 / 1-4期
关键词：
D O I：
10.1023/A:1012676026555
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
The diamagnetic muonium states in heavily doped GaAs are investigated with a combination of transverse-field and longitudinal-field mu SR techniques. In metallic n-type GaAs, formation of Mu(-) occurs because of the high Fermi energy. This analog of the hydride ion (H-) is located in a T-Ga interstice where it is essentially immobile up to about 500 K. At higher temperatures, Mu(T) acts as an electron-hole recombination center. In p-type GaAs, Mu(+) traps at two different sites, one at low temperatures and a second at higher temperatures after detrapping from the first.
引用
收藏
页码：309 / 314
页数：6
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