Novel aspects in thin film silicon solar cells-amorphous, microcrystalline and nanocrystalline silicon

被引:39
作者
Kondo, M [1 ]
Matsuda, A [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
关键词
plasma processing and deposition; silicon; solar cells;
D O I
10.1016/j.tsf.2003.12.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The improvement of photodegradation of a-Si:H has been studied on the basis of controlling the subsurface reaction and gaseous phase reaction. We found that higher deposition temperature, hydrogen dilution and triode method are effective to reduce the SiH2 density in the film and to suppress the photodegradation of solar cells. These results are explained in terms of the hydrogen elimination reaction in the subsurface region and the contribution of the higher silane radicals to the film growth. The high-rate deposition of muc-Si:H was obtained by means of a high-pressure method and further improvement in deposition rate and the film quality was achieved in combination with the locally high-density plasma, which enables effective dissociation of source gases without thermal damage. It was also found that the deposition pressure is crucial to improve the film quality for device. This technique was successfully applied to the solar cells and an efficiency of 7.9% was obtained at a deposition rate of 3.1 nm/s. The potential application of nanocrystalline silicon is also discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:97 / 102
页数:6
相关论文
共 29 条
[1]   IMPROVEMENT OF GRAIN-SIZE AND DEPOSITION RATE OF MICROCRYSTALLINE SILICON BY USE OF VERY HIGH-FREQUENCY GLOW-DISCHARGE [J].
FINGER, F ;
HAPKE, P ;
LUYSBERG, M ;
CARIUS, R ;
WAGNER, H ;
SCHEIB, M .
APPLIED PHYSICS LETTERS, 1994, 65 (20) :2588-2590
[2]   High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition [J].
Guo, LH ;
Kondo, M ;
Fukawa, M ;
Saitoh, K ;
Matsuda, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A) :L1116-L1118
[3]   RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON [J].
IQBAL, Z ;
VEPREK, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02) :377-392
[4]   Roles of SiH3 and SiH2 radicals in particle growth in rf silane plasmas [J].
Kawasaki, H ;
Ohkura, H ;
Fukuzawa, T ;
Shiratani, M ;
Watanabe, Y ;
Yamamoto, Y ;
Suganuma, S ;
Hori, M ;
Goto, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B) :4985-4988
[5]   Microcrystalline silicon and micromorph tandem solar cells [J].
Keppner, H ;
Meier, J ;
Torres, P ;
Fischer, D ;
Shah, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (02) :169-177
[6]  
KNOX RD, 1896, J VAC SCI TECHNOL A, V11, P1993
[7]   Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition [J].
Kondo, M ;
Toyoshima, Y ;
Matsuda, A ;
Ikuta, K .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :6061-6063
[8]   Microscopic structure of defects in microcrystalline silicon [J].
Kondo, M ;
Yamasaki, S ;
Matsuda, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :544-547
[9]   High rate growth of microcrystalline silicon at low temperatures [J].
Kondo, M ;
Fukawa, M ;
Guo, LH ;
Matsuda, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :84-89