Omni-directional reflectors for light-emitting diodes

被引:1560
作者
Kim, Jong Kyu [1 ]
Xi, J. -Q. [1 ]
Schubert, E. Fred [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Future Chips Constellat, Troy, NY 12180 USA
来源
LIGHT-EMITING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS X | 2006年 / 6134卷
关键词
light-emitting diode; omni-directional reflector;
D O I
10.1117/12.661563
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article discusses possible solutions to limitations in light extraction efficiency of light-emitting diodes (LEDs) using new types of triple-layer omni-directional reflectors (ODRs). The ODRs have lower mirror losses than metal reflectors and distributed Bragg reflectors (DBRs). High-reflectivity ODRs have been incorporated into AlGaInP LEDs and GaInN LEDs. It is shown that the ODR significantly increases light extraction from ODR-LEDs as compared to reference LEDs employing a DBR or metal reflector. Other examples of innovative concepts to be presented include novel materials with unprecedented low-refractive index, which further enhance the optical properties of ODRs.
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页数:12
相关论文
共 13 条
[1]  
Born M., 1987, PRINCIPLES OPTICS, P62
[2]   1.4x efficiency improvement in transparent-substrate (AlxGa1-x)0.5In0.5P light-emitting diodes with thin (≤2000 Å) active regions [J].
Gardner, NF ;
Chui, HC ;
Chen, EI ;
Krames, MR ;
Huang, JW ;
Kish, FA ;
Stockman, SA ;
Kocot, CP ;
Tan, TS ;
Moll, N .
APPLIED PHYSICS LETTERS, 1999, 74 (15) :2230-2232
[3]   High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications [J].
Gessmann, T ;
Schubert, EF .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) :2203-2216
[4]   Omnidirectional reflective contacts for light-emitting diodes [J].
Gessmann, T ;
Schubert, EF ;
Graff, JW ;
Streubel, K ;
Karnutsch, C .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (11) :683-685
[5]   All-polymer optoelectronic devices [J].
Ho, PKH ;
Thomas, DS ;
Friend, RH ;
Tessler, N .
SCIENCE, 1999, 285 (5425) :233-236
[6]   GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector [J].
Kim, JK ;
Gessmann, T ;
Luo, H ;
Schubert, EF .
APPLIED PHYSICS LETTERS, 2004, 84 (22) :4508-4510
[7]   High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].
Krames, MR ;
Ochiai-Holcomb, M ;
Höfler, GE ;
Carter-Coman, C ;
Chen, EI ;
Tan, IH ;
Grillot, P ;
Gardner, NF ;
Chui, HC ;
Huang, JW ;
Stockman, SA ;
Kish, FA ;
Craford, MG ;
Tan, TS ;
Kocot, CP ;
Hueschen, M ;
Posselt, J ;
Loh, B ;
Sasser, G ;
Collins, D .
APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367
[8]   Surface modified spin-on xerogel films as interlayer dielectrics [J].
Nitta, SV ;
Pisupatti, V ;
Jain, A ;
Wayner, PC ;
Gill, WN ;
Plawsky, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01) :205-212
[9]   Sculptured thin films and glancing angle deposition: Growth mechanics and applications [J].
Robbie, K ;
Brett, MJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1460-1465
[10]   Ultralow refractive index substrates-a base for photonic crystal slab waveguides [J].
Schmidt, M ;
Boettger, G ;
Eich, M ;
Morgenroth, W ;
Huebner, U ;
Boucher, R ;
Meyer, HG ;
Konjhodzic, D ;
Bretinger, H ;
Marlow, F .
APPLIED PHYSICS LETTERS, 2004, 85 (01) :16-18