Pa comparative study of an InP quantum dot laser and a GaXIn(1-X)P quantum well laser

被引：0

作者：

Manz, YM ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS | 2002年 / 722卷

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中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

A comparative study between a red-light emitting quantum dot (QD) and quantum well (QW) laser, grown in the same solid-source molcular beam epitaxy (SSMBE) machine under the same conditions, is presented. The QD laser consists of a threefold stack of 3.5 ML InP dots and the QW laser of a 4.5 nm thick compressively strained Ga30In70P layer, both embedded in a Ga52In48P waveguide. The threshold current density of the QD laser is j(thr) = 1.8 kA/cm(2) at 300 K and more than twice as large for the QW laser. Moreover, temperature dependent analysis of spontaneous emission spectra reveals that the threshold current density of the QD device is less temperature dependent than that of the QW laser, although the linewidth of the QD samples is larger.

引用

页码：325 / 330

页数：6

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