Optimization of IBC c-Si (n) Solar Cell Using 2D Physical Modeling

This research paper demonstrates the use of doping concentration effect of front surface field (FSF), back surface field (BSF), and emitter for high-efficiency of n-type monocrystalline silicon (c-Si) interdigitated back-contact (IBC) solar cells using Silvaco TCAD package. The integrated back contact solar cell is considering as a promising structure due to its high conversion efficiency, thinner substrate, and low-temperature processing of the substrate configuration. From previous research works, the considered IBC cell of 150-mu m thick n-type CZ silicon wafers with a half-pitch size of 500 mu m is studied and improved for either product quality and lower operating costs. The optimum conversion efficiency of about 24.79% has been achieved with open-circuit voltage up to 726 mV under the AM1.5 spectrum. Furthermore, the solar incident angle plays a critical factor affecting the considered device characteristics and performance of the fixed PV modules.