Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation

被引：13
作者：
Wang, Xing [1 ]
Liu, Hongxia [1 ]
Zhao, Lu [1 ]
Wang, Yongte [1 ]
Wang, Shulong [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Shaanxi, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 13期
基金：
中国国家自然科学基金;
关键词：
Atomic layer deposition;
D O I：
10.1007/s10854-019-01618-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resistive random access memory (RRAM) devices were designed using Al2O3/La2O3/Al2O3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al+ ions implantation on the resistive switching performances of the RRAM devices was investigated. Compared with the control sample without Al+ implantation, forming-free operation and larger ON/OFF resistance ratio were achieved in the Al+ implanted RRAM device. Besides, the resistive switching stability and electrical uniformity of the implanted device were enhanced. The enhanced performances of the Al+ implanted RRAM device were deduced by the improvement in the formation and disruption of conducting filaments in the Al2O3/La2O3/Al2O3 multi-stacked films.
引用
收藏
页码：12577 / 12583
页数：7
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