Effect of fluorine implantation on recovery characteristics of p-channel MOSFET after negative bias temperature instability stress

被引:6
作者
Oh, Sun-Ho [1 ]
Kwon, Hyuk-Min [1 ]
Kwon, Sung-Kyu [1 ]
Sung, Seung-Yong [1 ]
Yu, Jae-Nam [1 ]
Lee, Ga-Won [1 ]
Lee, Hi-Deok [1 ]
机构
[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea
基金
新加坡国家研究基金会;
关键词
NBTI DEGRADATION; 1/F NOISE; GATE; RELIABILITY; PERFORMANCE; GENERATION; IMPACT;
D O I
10.7567/JJAP.53.08LA03
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, the effect of fluorine implantation on the recovery characteristics of p-channel MOSFETs (PMOSFETs) after negative bias temperature instability (NBTI) stress was investigated. PMOSFETs using fluorine ion implantation (F-I/I) performed better than those without F-I/I after NBTI stress; it is thought that F-I/I can suppress the generation of permanent damage during NBTI stress. The relationship of Delta V-th and ASS during NBTI stress and recovery showed how much-permanent damage occurred. In addition, we confirmed with a 1/f noise measurement that the device with F-I/I was immune to NBTI stress in spite of a pre-existing bulk trap caused by implantation damage. Moreover, the device with F-I/I had greater activation energy than the device without F-I/I. As indicated by the results, fluorine implantation can decrease the generation of permanent damage under NBTI stress because of the stable Si-F bond. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页码:14 / 17
页数:4
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