Calculation of energy band and optical properties of CuInTe2 with doping

被引:6
作者
Liu, Kegao [1 ]
Ji, Ming [1 ]
Li, Huiping [2 ]
Xu, Chao [1 ]
机构
[1] Shandong Jianzhu Univ, Sch Mat Sci & Engn, Jinan, Shandong, Peoples R China
[2] Shandong Univ Sci & Technol, Sch Mat Sci & Engn, Qingdao, Shandong, Peoples R China
关键词
Doping; first-principle calculations; energy band; optical property; crystal structure; ELECTRONIC-STRUCTURES; THERMAL-PROPERTIES; CUINSE2;
D O I
10.1080/10584587.2019.1592076
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chalcopyrite CuInTe2 is a direct band gap semiconductor with 1.1 eV energy gap which can be adjusted by doping Ga or Al to match the solar spectrum. The theoretical calculations for CuInTe2 doping are performed using Cambridge serial total energy package (CASTEP) in Materials Studio under the PBE pseudopotential of the generalized gradient approximation (GGA). The calculation results show that the cell volumes of CuInTe2, CuGaTe2 and CuAlTe2 become larger after the structure optimization. After optimization of doping with Ga or Al in CuInTe2, the cell volume of CuInTe2 becomes smaller, and the larger the doping amount, the smaller the cell volume; It was found that as the doping amount increase of Ga or Al, the band gap becomes greater which can be continuously adjusted by changing the doping amount. Absorption rate of CuInTe2 doping reaches its peak at a wavelength of 250 nm, which orders of magnitude is up to 10(5). With the increase of the doping amount, the top peak has an increasing tendency. In the range of visible light wavelengths, the absorption rate keeps better, basically reaching 4.0 x 10(4) cm(-1).
引用
收藏
页码:33 / 42
页数:10
相关论文
共 14 条
[1]   Pressure effect on the structural and electronic properties of CuInS2 [J].
Adetunji, B. I. .
SOLID STATE SCIENCES, 2016, 55 :42-47
[2]   Preparation and characterization of (CuInTe2)1-x(TaTe)x solid solutions (0<x<1) [J].
Grima-Gallardo, P. ;
Izarra, O. ;
Mendez, L. ;
Torres, S. ;
Quintero, M. ;
Cabrera, H. ;
Perez-Cappe, E. ;
Zumeta-Dube, I. ;
Rodriguez, A. ;
Aitken, J. A. ;
Rai, D. P. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 747 :176-188
[3]   Thermoelectric properties of Ni-doped CuInTe2 [J].
Kucek, V. ;
Drasar, C. ;
Navratil, J. ;
Plechacek, T. ;
Benes, L. .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2015, 83 :18-23
[4]   First-principle calculations of structural, electronic, optical and thermal properties of hydrogenated graphene [J].
Kumar, V. ;
Santosh, R. ;
Chandra, S. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2017, 226 :64-71
[5]   Electronic structures and optical properties of Cu1-xNaxInSe2 by first-principle calculations [J].
Li, Z. B. ;
Wang, X. ;
Yao, K. L. .
SOLID STATE COMMUNICATIONS, 2010, 150 (33-34) :1514-1517
[6]   Simultaneous regulation of electrical and thermal transport properties in CuInTe2 by directly incorporating excess ZnX ( X= S, Se) [J].
Luo, Yubo ;
Jiang, Qinghui ;
Yang, Junyou ;
Li, Weixin ;
Zhang, Dan ;
Zhou, Zhiwei ;
Cheng, Yudong ;
Ren, Yangyang ;
He, Xu ;
Li, Xin .
NANO ENERGY, 2017, 32 :80-87
[7]   Ab initio studies of structural, elastic and thermal properties of copper indium dichalcogenides (CuInX2: X = S, Se, Te) [J].
Sharma, Sheetal ;
Verma, A. S. ;
Bhandari, R. ;
Jindal, V. K. .
COMPUTATIONAL MATERIALS SCIENCE, 2014, 86 :108-117
[8]   Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2 and CuInTe2 nanocubes and their characterization [J].
Sugan, S. ;
Baskar, K. ;
Dhanasekaran, R. .
CURRENT APPLIED PHYSICS, 2014, 14 (11) :1416-1420
[9]   Three dimensional topological insulators of CuxAu1-xInTe2 alloys [J].
Taghizade, N. ;
Rashedi, G. ;
Nourbakhsh, Z. ;
Farahi, M. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 593 :235-241
[10]   Optical properties of Al-doped CuInSe2 from the first principle calculation [J].
Tang, Fu-Ling ;
Zhu, Zheng-Xin ;
Xue, Hong-Tao ;
Lu, Wen-Jiang ;
Feng, Yu-Dong ;
Wang, Zhi-Min ;
Wang, Yi .
PHYSICA B-CONDENSED MATTER, 2012, 407 (24) :4814-4818