Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

被引：86
作者：
Maur, M. Auf Der [1 ]
Galler, B. [2 ]
Pietzonka, I. [2 ]
Strassburg, M. [2 ]
Lugauer, H. [2 ]
Di Carlo, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[2] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 13期
关键词：
ELECTRICAL CHARACTERISTICS; SIMULATION; EFFICIENCY; GAN;
D O I：
10.1063/1.4896970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters. (C) 2014 AIP Publishing LLC.
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页数：4
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