Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents.

被引：0

作者：

Akimova, IV ^{[1
]}

Eliseev, PG ^{[1
]}

Osinskii, MA ^{[1
]}

Perlin, P ^{[1
]}

机构：

[1] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131

来源：

KVANTOVAYA ELEKTRONIKA | 1996年 / 23卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation was made of the electroluminescence spectra of a structure with an InxGa1-xN (3 nm thick) quantum well pumped by current pulses of up to 4 kA/cm(2) density at T = 77 K and 300 K. Considerable spectral broadening (Delta E = 150-200 meV) of nonthermal nature was observed. A preliminary study was made of the stability of this light-emitting structure pumped by high-current pump pulses.

引用

页码：1069 / 1071

页数：3

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