Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy

被引：119
作者：
Belk, JG
McConville, CF
Sudijono, JL
Jones, TS
Joyce, BA
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, SEMICOND MAT IRC, LONDON SW7 2BZ, ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, DEPT CHEM, LONDON SW7 2AY, ENGLAND
[3] UNIV WARWICK, DEPT PHYS, COVENTRY CV4 7AL, W MIDLANDS, ENGLAND
来源：
SURFACE SCIENCE | 1997年 / 387卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
gallium arsenide; indium arsenide; molecular beam epitaxy; reflection high energy electron diffraction; semiconductor films; surface segregation; surface structure; morphology; roughness; and topography;
D O I：
10.1016/S0039-6028(97)00355-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In situ scanning tunnelling microscopy and reflection high energy electron diffraction have been used to study InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy. For the deposition of InAs on GaAs(001) a number of different surface reconstructions can be identified, depending on substrate temperature and InAs coverage, and there is significant evidence for alloying in the surface layer. An (In,Ga)As wetting layer is formed and the complete range of surface reconstructions are discussed, together with the tendency of indium atoms to segregate following the deposition of a further GaAs capping layer and the formation of GaAs-InAs-GaAs(001) interfaces. Finally, a comparison is made with the surface structure of GaAs layers deposited on InAs(001) substrates. (C) 1997 Elsevier Science B.V.
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收藏
页码：213 / 226
页数：14
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