Damage analysis in Al thin films fatigued at ultrahigh frequencies

被引:11
作者
Eberl, Christoph
Spolenak, Ralph
Kraft, Oliver
Kubat, Franz
Ruile, Werner
Arzt, Eduard
机构
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Metallkunde, D-70569 Stuttgart, Germany
[3] ETH, Dept Mat, Lab Nanomet, CH-8093 Zurich, Switzerland
[4] Forschungszentrum Karlsruhe, Inst Met Forsch 2, D-76021 Karlsruhe, Germany
[5] Univ Karlsruhe, TH, Inst Zuverlassigkeit Bauteilen & Syst, D-76131 Karlsruhe, Germany
[6] EPCOS AG, SAW RD BS BA, D-80671 Munich, Germany
关键词
D O I
10.1063/1.2189970
中图分类号
O59 [应用物理学];
学科分类号
摘要
A quantitative damage analysis provides insight into the damage mechanisms and lifetimes of aluminum thin films fatigued at ultrahigh frequencies. Surface acoustic wave test devices were used to test continuous and patterned Al thin films up to more than 10(14) cycles. The analysis revealed increasing extrusion and void formation concentrated at grain boundaries. This finding and the observed grain growth indicate a high material flux at the grain boundaries induced by the cyclic load. A correlation between device degradation and defect density is established which is explained by a theoretical model. For stress amplitudes as low as 14 MPa lifetime measurements showed no fatigue limit for 420 nm Al thin films. (c) 2006 American Institute of Physics.
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页数:8
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