Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode

被引：38
作者：
Ebke, D.
Schmalhorst, J. [1 ]
Liu, N. -N.
Thomas, A.
Reiss, G.
Huetten, A.
机构：
[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany
[2] Res Ctr Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期
关键词：
D O I：
10.1063/1.2363939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi/Co2FeSi](x10) multilayer electrodes the magnetoresistance can be increased to 114% and the full bulk magnetization is reached. All junctions show an inverse tunnel magnetoresistance, when the electrons are tunneling from the Co-Fe into the Heusler compound electrode. This results from a special band structure feature of full Heusler compounds, which is robust even for atomic disorder in the films.
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