Strain-Enhanced Performance of Si-Nanowire FETs

被引：4

作者：

Casse, M. ^{[1
]}

Barraud, S. ^{[1
]}

Coquand, R. ^{[1
,2
,3
]}

Koyama, M. ^{[1
,4
]}

Cooper, D. ^{[1
]}

Vizioz, C. ^{[1
]}

Comboroure, C. ^{[1
]}

Perreau, P. ^{[1
]}

Maffini-Alvaro, V. ^{[1
]}

Tabone, C. ^{[1
]}

Tosti, L. ^{[1
]}

Barnola, S. ^{[1
]}

Delaye, V. ^{[1
]}

Aussenac, F. ^{[1
]}

Ghibaudo, G. ^{[3
]}

Iwai, H. ^{[4
]}

Reimbold, G. ^{[1
]}

机构：

[1] CEA Leti, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France

[2] ST Microelect, F-38926 Crolles, France

[3] INPG MINATEC, IMEP LAHC, F-38016 Grenoble, France

[4] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa, Japan

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 3 | 2013年 / 53卷 / 03期

关键词：

CARRIER MOBILITY; ORIENTATION; TRANSISTORS; CMOS;

D O I：

10.1149/05303.0125ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The combination of a multi-gate architecture and strain engineering is a promising way to fabricate high performance CMOS transistors. In this work we examine the effect of strain in Si nanowire Tri-Gate and Omega-Gate transistors. We present and discuss the results of electrical characterization of these advanced devices, with special attention to the carrier mobility, and to the piezoresistive coefficients.

引用

页码：125 / 136

页数：12

共 50 条

[21] Strain-enhanced sintering of iron powders
D.R. Amador
M.A. Monge
J.M. Torralba
R. Pareja
Applied Physics A, 2005, 80 : 803 - 811
[22] Strain-enhanced sintering of iron powders
Amador, DR
Monge, MA
Torralba, JM
Pareja, R
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (04): : 803 - 811
[23] Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs
Grillet, Corentin
Logoteta, Demetrio
Cresti, Alessandro
Pala, Marco G.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (05) : 2425 - 2431
[24] Silicon nanowire FETs with uniaxial tensile strain
Feste, S. F.
Knoch, J.
Habicht, S.
Buca, D.
Zhao, Q. -T.
Mantl, S.
SOLID-STATE ELECTRONICS, 2009, 53 (12) : 1257 - 1262
[25] Strained Si Nanowire Tunnel FETs and Inverters
Zhao, Q. T.
Knoll, L.
Richter, S.
Schmidt, M.
Blaeser, S.
Luong, G. V.
Wirths, S.
Nichau, A.
Schaefer, A.
Trellenkamp, S.
Hartmann, J. -M.
Bourdelle, K. K.
Buca, D.
Mantl, S.
2013 THIRD BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS (E3S), 2013,
[26] Photo-Attachment of Biomolecules for Miniaturization on Wicking Si-Nanowire Platform
Cheng, He
Zheng, Han
Wu, Jia Xin
Xu, Wei
Zhou, Lihan
Leong, Kam Chew
Fitzgerald, Eugene
Rajagopalan, Raj
Too, Heng Phon
Choi, Wee Kiong
PLOS ONE, 2015, 10 (02):
[27] CONCERNING STRAIN-ENHANCED CORROSION MECHANISMS OF SCC
VERMILYEA, DA
DIEGLE, RB
CORROSION, 1976, 32 (01) : 26 - 29
[28] Gate-All-Around Si-Nanowire Transistors: Simulation at Nanoscale
Dey, S.
Dash, T. P.
Das, S.
Mohapatra, E.
Jena, J.
Maiti, C. K.
PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON), 2018, : 137 - 141
[29] Photoelectrocatalytic reduction of CO2 to methanol over a photosystem Ⅱ-enhanced Cu foam/Si-nanowire system
Zichao Lian
Donglai Pan
Wenchao Wang
Dieqing Zhang
Guisheng Li
Hexing Li
Journal of Environmental Sciences, 2017, 60 (10) : 108 - 113
[30] A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
Conzatti, F.
Pala, M. G.
Esseni, D.
Bano, E.
Selmi, L.
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,

← 1 2 3 4 5 →