Quantum well intermixing of multiple quantum wells on InP by argon plasma bombardment and the sputtered-SiO2 film

被引：3

作者：

Chiu, C. L. ^{[1
]}

Lay, T. S. ^{[2
]}

机构：

[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 03期

关键词：

Argon - Reactive ion etching - Energy gap - Inductively coupled plasma - Semiconductor quantum wells - Indium phosphide - Rapid thermal annealing - Semiconductor alloys - Silica - Semiconducting indium phosphide;

D O I：

10.1007/s00339-013-7899-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A quantum well intermixing process combining inductively-coupled-plasma reactive ion etching (ICP-RIE) and SiO2 sputtering film was investigated for the InGaAsP and InGaAlAs multi-quantum wells (MQWs). Optimal distance is 300-nm-thick for InGaAsP and of 200-nm-thick for InGaAlAs. Between MQWs and the upper cladding by ICP-RIE and bombardment, covering the 300-nm-thick sputtered SiO2 using rapid thermal annealer (RTA) processing resulted in a band-gap blue-shift of 90 nm for InGaAsP and of 60 nm for InGaAlAs.

引用

页码：931 / 936

页数：6

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