Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon

被引：6
作者：
Xing, YM [1 ]
Zhang, JH
Yang, WW
Yu, YH
Song, ZR
Lin, ZX
Shen, DS
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1767958
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-intensity electron field emission was obtained from a SiC/Si heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the SiC/Si heterostructure by post-implantation etching off the top Si. A low turn-on field of 2.6 V/mum was observed with samples formed by 160 keV carbon implantation with a dose of 8.0x10(17) cm(-2). The existence of the densely distributed small protrusions was considered as the main reason for efficient emission. (C) 2004 American Institute of Physics.
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收藏
页码：5461 / 5463
页数：3
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