Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire (1120)

被引：13

作者：

Ueno, Kohei ^{[1
]}

Kishikawa, Eiji ^{[2
]}

Inoue, Shigeru ^{[2
]}

Ohta, Jitsuo ^{[2
]}

Fujioka, Hiroshi ^{[2
]}

Oshima, Masaharu ^{[1
]}

Fukuyama, Hiroyuki ^{[3
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 03期

关键词：

AlN; sapphire; sputtering; thin films; structure; VAPOR-PHASE EPITAXY; IMPACT; LAYERS;

D O I：

10.1002/pssr.201308275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality AlN epilayers were grown via pulsed sputtering deposition on thermally nitrided sapphire (11 (2) over bar0) with precise control of the N/Al ratio. Under slightly Al-rich growth conditions, the growth of AlN epilayers on the thermally nitrided sapphire proceeded in a two-dimensional mode from the initial stage of growth, and their surfaces were atomically flat stepped and terraced structures. The FWHM values of the X-ray rocking curves were as low as 87 arcsec and 339 arcsec for the 0002 and 1 (1) over bar 02 diffractions, respectively, at a film thickness of 400 nm. The present approach is therefore quite promising for the low-cost fabrication of AlGaN-based UV optical devices.

引用

页码：256 / 259

页数：4

共 19 条

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