Crossed Andreev reflection-induced magnetoresistance

被引：30

作者：

Giazotto, Francesco ^{[1
]}

Taddei, Fabio

Beltram, Fabio

Fazio, Rosario

机构：

[1] CNR, INFM, NEST, I-56126 Pisa, Italy

[2] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[3] Scuola Int Super Studi Avanzati, SISSA, I-34014 Trieste, Italy

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.97.087001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.

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页数：4

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