Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

被引：16
作者：
Huang, X. D. [1 ]
Ma, Y. [2 ]
Song, J. Q. [3 ]
Lai, P. T. [3 ]
Tang, W. M. [4 ]
机构：
[1] Southeast Univ, Sch Elect Sci & Technol, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China
[2] Army Engn Univ PLA, Natl Key Lab Electromagnet Environm Effects & Ele, Nanjing 210007, Jiangsu, Peoples R China
[3] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[4] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期
基金：
中国国家自然科学基金;
关键词：
InGaZnO (IGZO); InOx; metal-hydroxyl (M-OH); postmetallization annealing (PMA); thin-film transistor (TFT); GATE-BIAS STRESS; IGZO TFTS; PLASMA TREATMENT; STABILITY;
D O I：
10.1109/TED.2018.2797073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deeplevel acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor andmainly affects the carriermobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.
引用
收藏
页码：1009 / 1013
页数：5
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